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One of the main issues in the photovoltaic industry of silicon solar cells is the optical losses via reflection. To overcome this issue, texturization (chemical etching) remains the most commonly used method to produce a random pyramid structure to reduce reflection and thus increase photocurrent generation. Because of the anisotropic etching property of alkaline solution, square-based upright pyramids are formed, i.e., the difference in etching rates between (100) and (111) planes. In this paper, the following etching solutions were studied: 4/10, 6/6, and 10/4 (KOH weight percentage/IPA volume percentage).The optical, morphological, and electric characterizations using UV-Vis spectroscopy, electron scanning microscopy (SEM), and quasi-steady-state photoconductance (QSSPC) device are performed. Also, the standard weighted reflectance (SWR) was calculated. The pyramid size distribution generated using KOH-IPA solutions was investigated using an image processing program (ImageJ) via SEM images. The calculation of the height of the pyramids reveals that the typical pyramid size ranges from 3 to 9 m, with large pyramids of small proportions. Furthermore, when the pyramids are distributed in a mixture of tiny and medium pyramids in precise proportions, the reflectivity is at its lowest, and as the number of large pyramids rises, the reflectivity increases.
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