Comparative study of the sputtering yield and photovoltaic efficiency in photovoltaic materials

Main Article Content

Souad Merabet


The comparison of the results obtained from argon ions and those obtained from neon ions in various photovoltaic materials in this work led to the identification of factors influencing the ionic sputtering deposition method as well as the effect of the used ion beam type. The SRIM simulation software was used in the study. According to the results, the sputtering yield increases proportionally with the angle and energy of incidence up to a certain point, then decreases. Furthermore, the value disparity confirmed the close relationship between the spraying process and the material structure. The same findings were made when the electronic and nuclear stopping powers were calculated. Solar cells were then simulated using the materials under consideration.

Article Details

How to Cite
S. . Merabet, “Comparative study of the sputtering yield and photovoltaic efficiency in photovoltaic materials”, J. Ren. Energies, vol. 1, no. 1, pp. 115 -, Sep. 2023.


Tzitzios V, Synthesis, Development and Characterization of Magnetic Nanomaterials. Nanomaterials. 2022, 12(7):1036. [2] Jilani A, Abdel-wahab M S, Hosny Hammad A, Advance Deposition Techniques for Thin Film and Coating, in Modern Technologies for Creating the Thin-film Systems and Coatings. London, United Kingdom: IntechOpen; 2017. doi: 10.5772/65702.

Eriksson A, Zhu J, Ghafoor N, Johansson M, Sjölen J, Jensen J, Odén M, Hultman L and Rosén J, Layer Formation by Resputtering in Ti-Si-C Hard Coatings during Large Scale Cathodic Arc Deposition. Surface & Coatings Technology. 2011, 205(15), 3923-3930.

Madadi M, Heiska J, Multia J, Karppinen M, Atomic and Molecular Layer Deposition of Alkali Metal Based Thin Films. ACS Applied Materials & Interfaces. 2021, 13 (48), 56793-56811. doi: 10.1021/acsami.1c17519. [5] Malik S, Tripathi CC, Thin Film Deposition by Langmuir Blodgett Technique for Gas Sensing Applications. Journal of Surface Engineered Materials and Advanced Technology. 2013, 3(3) Article ID:34491,7. doi:10.4236/jsemat.2013.33031.

Frenkel D, Introduction to Monte Carlo Methods, Computational Soft Matter: From Synthetic Polymers to Proteins. Lecture Notes, John von Neumann Institute for Computing, Julich, NIC Series, 23, ISBN 3-00-012641-4, pp. 29-60, 2004. [7] Martin-Bragado I, Borges R, Pablo-Balbuena J, Jaraiz M, Kinetic Monte Carlo simulation for semiconductor processing: a review. Progress in Materials Science, 2017. doi: 10.1016/j.pmatsci.2017.09.

Zeigler F, Beirsack JP, Littman U, 1985, The Stopping and Range of Ions in Solids. Pergamon Press, New York; version 2013.

Martinie S, Saad-Saoud T, Moindjie S, Munteanu D, Autran J, Behavioral modeling of SRIM tables for numerical simulation. Nucl. Instrum. Meth. Phys. Res. B; 2014, 322, 2–6. doi:10.1016/j.nimb.2013.12.023

Attaf A, Benkhedir ML, Aida MS, Influence of substrate bombardment on sputtered a-Si:N thin film properties. Physica B: Condensed Matter, 2005, 355 (1–4), pp. 270-279. doi:10.1016/j.physb. 2004.11.004

Alfonso JE, Olaya J, Cubillo G, Thin film growth through sputtering technique and its applications. In: Rubens M, Andreeta B, editors. Crystallization. Rijeka, Croatia: Intech Open; 2012. pp. 397-432. doi: 10.5772/35844.

Javier MO-G, Luis VZ, Mario C, Raú LG, Andre S.R.-C, Ana M.-B, Rodolfo C, Self-organized nanopatterning of silicon surfaces by ion beam sputtering. Materials Science and Engineering R, Nucl. Inst. Meth. Phys. Res. B, 2014, 86, 1–44. doi :10.1016/j.mser.2014.09.001

Muzaffar Imam M, Askari SSA, Das M K, Effect of grain boundary orientation on the recombination in polycrystalline materials: a theoretical and simulation study. Applied Physics A, 2022, 128.10 : 891. Doi : 10.1007/s00339-022-06027-5

Thivakarasarma T, Lakmal AAI, Dassanayake BS , Velauthapillai D, Ravirajan P, Thermally Evaporated Copper Iodide Hole-Transporter for Stable CdS/CdTe Thin-Film Solar Cells. Nanomaterials 2022, 12, 2507. Doi :10.3390/nano12142507