Numerical Simulation Study of CIGS-based Thin Film and Heterojunction Solar Cells: Doping and Buffer/Absorber Layer Optimization for Maximum Efficiency

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Leila Ghalmi
Souhila Bensmaine
Chams El Hayat Merzouk

Abstract

In this work we present the results of the numerical simulation study of the electrical characteristics of a CIGS-based thin film and heterojunction solar cell and their interpretations. First, we will simulate two solar cells of structures: ZnO/CdS(n)/CIGS(p)/Mo and ZnO/ZnS(n)/CIGS(p)/Mo using the SCAPS-1D software. We will compare the results of the electrical simulation of the CdS cell with those found experimentally. Next, we will compare the electrical simulation results of the CdS cell with the ZnS cell. After that, we will choose the best cell to study the effect of doping and buffer/absorber layer thickness on the photovoltaic parameters (mceclip6.pngmceclip7.png) of the solar cell with the aim of achieving maximum efficiency of the CIGS-based solar cell.

Article Details

How to Cite
[1]
L. . Ghalmi, S. . Bensmaine, and C. E. H. . Merzouk, “Numerical Simulation Study of CIGS-based Thin Film and Heterojunction Solar Cells: Doping and Buffer/Absorber Layer Optimization for Maximum Efficiency”, J. Ren. Energies, vol. 1, no. 1, pp. 51 -, Sep. 2023.
Section
special

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