Electrically Active Defects in Silicon after various Optical Thermal Processing
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Abstract
Schottky diodes have been made on virgin n-type monocrystalline silicon annealed by various optical thermal processes including lasers and incoherent light heat-pulses. The electrical characteristics of the diodes have been measured as a function of the laser energy density. A strong change in all their electrical parameters occurs for energy density equal or higher than a fluence threshold at which the processed silicon surface layer turns into melt. Capacitance measurements and DLTS analyses show that laser irradiations introduce a large density of deep levels related to donor defects in the processed surface region. DLTS analyses performed on samples processed with incoherent light heat-pulses show that deep levels related to majority carrier trap defects are also generated by this new thermal process. The results have been compared to those obtained from parallel analyses carried out on p-type silicon processed using either rapid or conventional thermal annealing mode.
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