Characterization of CuInSe2 thin films elaborated by electrochemical deposition
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Abstract
In this paper, we report the elaboration and characterization of CuInSe2 thin films prepared by electrochemical deposition technique. The thin films were deposited at room temperature using two electrodes cell configuration, then they annealed under argon atmosphere at 300 °C for 30 and 45 mn. The structural and optical properties of the films were characterized respectively by means of X-ray diffraction and transmission spectrophotometer measurements. The band gap of the samples was estimated using optical transmittance. All elaborated films show the tetragonal chalcopyrite CuInSe2 with preferential orientation (112) plan. X- ray diffraction and calculation of grain size of the films show that the film annealed at 300 °C during 45 mn presents a good cristallinity, high grain size and its band gap is close to 1.1 eV.
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