Phosphorus emitter profile control for silicon solar cell using the doss diffusion technique

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Rachid Chaoui
Bedra Mahmoudi
Abdelghani Messaoud
Yasmina Si Ahmed
Amine Mefoued
Brahim Mahmoudi


The Doped Oxide Solid Source (DOSS) diffusion technique is well suited for fine-tuning of the surface concentration. The dopant surface concentration is important during phosphorus emitter diffusion due to the opposite requirements of a lowly doped emitter for good blue response and a sufficiently high surface concentration for a good ohmic contact. The sources are made in the laboratory using the standard POCl3 diffusion technique. DOSS Diffusions were carried out in the temperature range 850-1050°C using sources with different doping levels obtained by varying the POCl3 partial pressure from 0.004 % to 4.28 %. The electrical profiles were measured using the Stripping Hall profiling technique. Phosphorus diffusion profiles with the complete elimination of the dead layer have been obtained over a large range of source concentrations for all investigated diffusion temperatures. The residual diffusion oxide thickness increased with both temperature and source doping level within the range 7.5-30 nm. XPS profiling indicated that the composition of the residual glass was a mixture of P2O5 and SiO2.

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R. . Chaoui, B. . Mahmoudi, A. . Messaoud, Y. . Si Ahmed, A. . Mefoued, and B. . Mahmoudi, “Phosphorus emitter profile control for silicon solar cell using the doss diffusion technique”, J. Ren. Energies, vol. 19, no. 2, pp. 303 -, Jun. 2016.