Influence of interfacial oxide layer thickness on conversion efficiency of SnO2/SiO2/Si(N) Solar Cells

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Published: Sep 30, 2008
DOI: https://doi.org/10.54966/jreen.v11i3.89
Keywords:
APCVD, Heterostructure, Tin oxide, Optimization, Efficiency, Solar cell, Photovoltaic conversion

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Dalila Hocine
Laboratoire des Techniques Avancées du Génie Electrique, Département d’Electronique, Université Mouloud Mammeri, ‘UMMTO’, B.P. N°17, Tizi-Ouzou, Algérie
Mohamed Said Belkaïd
Laboratoire des Techniques Avancées du Génie Electrique, Département d’Electronique, Université Mouloud Mammeri, ‘UMMTO’, B.P. N°17, Tizi-Ouzou, Algérie
Kahina Lagha
Laboratoire des Techniques Avancées du Génie Electrique, Département d’Electronique, Université Mouloud Mammeri, ‘UMMTO’, B.P. N°17, Tizi-Ouzou, Algérie

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How to Cite
[1]
D. . Hocine, M. S. . Belkaïd, and K. . Lagha, “Influence of interfacial oxide layer thickness on conversion efficiency of SnO2/SiO2/Si(N) Solar Cells”, J. Ren. Energies, vol. 11, no. 3, pp. 379 -, Sep. 2008.
Issue
Vol. 11 No. 3 (2008): Volume 11 (Regular)
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Articles
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